bdx34, bdx34a, bdx34b, bdx34c, BDX34D pnp silicon power darlingtons
1 august 1993 - revised september 2002 specifications are subject to change without notice. designed for complementary use with bdx33, bdx33a, bdx33b, bdx33c and bdx33d 70 w at 25c case temperature 10 a continuous collector current minimum h fe of 750 at 3 v, 3 a absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. derate linearly to 150c case temperature at the rate of 0.56 w/c. 2. derate linearly to 150c free air temperature at the rate of 16 mw/c. rating symbol value unit collector-base voltage (i e = 0) bdx34 bdx34a bdx34b bdx34c BDX34D v cbo -45 -60 -80 -100 -120 v collector-emitter voltage (i b = 0) bdx34 bdx34a bdx34b bdx34c BDX34D v ceo -45 -60 -80 -100 -120 v emitter-base voltage v ebo -5 v continuous collector current i c -10 a continuous base current i b -0.3 a continuous device dissipation at (or below) 25c case temperature (see note 1) p tot 70 w continuous device dissipation at (or below) 25c free air temperature (see note 2) p tot 2w operating free air temperat ure r ange t j -65 to +150 c storage temperature range t stg -65 to +150 c operating free-air temperature range t a -65 to +150 c b c e to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdtraca 1 2 3
bdx34, bdx34a, bdx34b, bdx34c, BDX34D pnp silicon power darlingtons 2
august 1993 - revised september 2002 specifications are subject to change without notice. notes: 3. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 4. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. electrical characteristics at 25c case temperature (unless otherwise noted) parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = -100 ma i b = 0 (see note 3) bdx34 bdx34a bdx34b bdx34c BDX34D -45 -60 -80 -100 -120 v i ceo collector-emitter cut-off current v ce = -30 v v ce = -30 v v ce = -40 v v ce = -50 v v ce = -60 v v ce = -30 v v ce = -30 v v ce = -40 v v ce = -50 v v ce = -60 v i b =0 i b =0 i b =0 i b =0 i b =0 i b =0 i b =0 i b =0 i b =0 i b =0 t c = 100c t c = 100c t c = 100c t c = 100c t c = 100c bdx34 bdx34a bdx34b bdx34c BDX34D bdx34 bdx34a bdx34b bdx34c BDX34D -0.5 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 ma i cbo collector cut-off current v cb = -45 v v cb = -60 v v cb = -80 v v cb = -100 v v cb = -120 v v cb = -45 v v cb = -60 v v cb = -80 v v cb = -100 v v cb = -120 v i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 t c = 100c t c = 100c t c = 100c t c = 100c t c = 100c bdx34 bdx34a bdx34b bdx34c BDX34D bdx34 bdx34a bdx34b bdx34c BDX34D -1 -1 -1 -1 -1 -5 -5 -5 -5 -5 ma i ebo emitter cut-off current v eb = -5 v i c =0 -10 ma h fe forward current transfer ratio v ce = -3 v v ce = -3 v v ce = -3 v v ce = -3 v v ce = -3 v i c =-4 a i c =-4 a i c =-3 a i c =-3 a i c =-3 a (see notes 3 and 4) bdx34 bdx34a bdx34b bdx34c BDX34D 750 750 750 750 750 v be(on) base-emitter voltage v ce = -3 v v ce = -3 v v ce = -3 v v ce = -3 v v ce = -3 v i c =-4 a i c =-4 a i c =-3 a i c =-3 a i c =-3 a (see notes 3 and 4) bdx34 bdx34a bdx34b bdx34c BDX34D -2.5 -2.5 -2.5 -2.5 -2.5 v v ce(sat) collector-emitter saturation voltage i b = -8 ma i b = -8 ma i b = -6 ma i b = -6 ma i b = -6 ma i c =-4 a i c =-4 a i c =-3 a i c =-3 a i c =-3 a (see notes 3 and 4) bdx34 bdx34a bdx34b bdx34c BDX34D -2.5 -2.5 -2.5 -2.5 -2.5 v v ec parallel diode forward voltage i e = -8 a i b = 0 -4 v
bdx34, bdx34a, bdx34b, bdx34c, BDX34D pnp silicon power darlingtons 3
august 1993 - revised september 2002 specifications are subject to change without notice. ? voltage and current values s hown are nominal; exact values vary slightly with transistor parameters. thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 1.78 c/w r ja junction to free air thermal resist ance 62.5 c/w resistive-load-switching characteristics at 25c case tem perature parameter test conditions ? min typ max unit t on tu r n - o n t i m e i c = -3 a v be(off) = 3.5 v i b(on) = -12 ma r l = 10 ? i b(off) = 12 ma t p = 20 s, dc 2% 1s t off turn-off time 5s
bdx34, bdx34a, bdx34b, bdx34c, BDX34D pnp silicon power darlingtons 4
august 1993 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a -05 -10 -10 h fe - typical dc current gain 50000 100 1000 10000 tcs135af t c = -40c t c = 25c t c = 100c v ce = -3 v t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs collector current i c - collector current - a -05 -10 -10 v ce(sat) - collector-emitter saturation voltage - v -20 -15 -10 -05 tcs135ah t c = -40c t c = 25c t c = 100c t p = 300 s, duty cycle < 2% i b = i c / 100 base-emitter saturation voltage vs collector current i c - collector current - a -05 -10 -10 v be(sat) - base-emitter saturation voltage - v -30 -25 -20 -15 -10 -05 tcs135aj t c = -40c t c = 25c t c = 100c i b = i c / 100 t p = 300 s, duty cycle < 2%
bdx34, bdx34a, bdx34b, bdx34c, BDX34D pnp silicon power darlingtons 5
august 1993 - revised september 2002 specifications are subject to change without notice. thermal information figure 4. maximum power dissipation vs case temperature t c - case temperature - c 0 255075100125150 p tot - maximum power dissipation - w 0 10 20 30 40 50 60 70 80 tis130ab
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